RTC6691 v0.3 data sheet jul 2006 1 www.richwave.com.tw specifications subject to change without notice pre liminary confidential proprietary description the RTC6691 silicon- germanium (sige) power amplifier (pa) is designed to operate in 2.4ghz ism band, compatible with 802.11b/g wireless lan system with high power, high gain. the amplifier consists of 3 gain stages with inter-stage matching, build- in input matching network, and a power detector for close lo op power control operation. in 802.11g mode (ofdm 64qam, 54mbps), it provides a low evm (erro r-vector magnitude) of 3% at +21.5dbm linear output power. the device is packaged in a tiny industry-standard 16- lead surface mount package qfn16 3x3. feature 3.3v power supply maximum linear output power for 11g usage : +21.5 d bm ( 54mbps ofdm 64 qam ) maximum linear output power for 11b usage : +26 dbm ( 11mbps cck ) small signal gain : 33.5db on-chip input matching operation ambient temperature: -40 ~ +85 c lead-free rohs compliant application high power wlan applications ieee 802.11b/g wireless lan system 2.4ghz ism band application 2.4ghz cordless phones pinout (top view) free datasheet http://
RTC6691 v0.3 data sheet jul 2006 2 www.richwave.com.tw specifications subject to change without notice pre liminary confidential proprietary pin function description pin function description 1 nc not connected 2 rfin rf input. input matching network is built on chip. 3 rfin same as pin 2 4 nc not connected 5 vccb power supply for bias circuit, typically 3.3 v 6 vref1 bias control voltage 1. typically 2.9v. pin 6,7 can be used to control pa on/off. 7 vref2 bias control voltage 2. typically 2.9v. pin 6,7 can be used to control pa on/off. 8 det_ref power detector enable. typically 3v. 9 det detector output voltage for output power inde x 10 rfout rf output. 11 rfout same as pin 10 12 vcc3 power supply for power stage-3, typically 3 .3v 13 nc not connected 14 vcc2 power supply for power stage-2, typically 3 .3v 15 nc not connected 16 vcc1 power supply for power stage-1, typically 3 .3v absolute maximum ratings parameter rating units supply voltage -0.5 to +5.0 v reference voltage(vref) 0.0 to +4.0 v input rf level +10 dbm operating ambient temperature -40 to +85 storage temperature -40 to +150 dc electrical chracteristics t=25 , vcc=3.3v, freq=2.45ghz parameter condition min typ max units supply voltages vcc1 3.0 3.3 4.2 volts vcc2 3.0 3.3 4.2 volts vcc3 3.0 3.3 4.2 volts vref1 2.9 volts vref2 2.9 volts supply currents icc1 + icc2 + icc3 (for 802.11g usage) pout= 21.5 dbm 240 ma free datasheet http://
RTC6691 v0.3 data sheet jul 2006 3 www.richwave.com.tw specifications subject to change without notice pre liminary confidential proprietary icc1 + icc2 + icc3 (for 802.11b usage) pout = 26 dbm 360 ma ioff standby current 0.05 ua iref1 quiescent (no rf) 1.2 ma iref2 quiescent (no rf) 2.0 ma vpd pout=22 dbm 1.09 v pdr power detector range 0 25 dbm ac electrical chracteristics t=25 , vcc=3.3v, freq=2.45ghz parameter condition min typ max units frequency range 2.4 2.45 2.5 ghz saturated output power 29 dbm linear efficiency measured @ p1db 36.3 % small signal gain pin=-30dbm 33.5 db input vswr p in =-30 dbm 2:1 linear pout for 11g usage 802.11g ofdm 64 qam evm = 3% 21.5 dbm pout for 11g spectral mask 802.11g ofdm 64 qam 23.5 dbm linear pout for 11b usage pass 802.11b cck spectral mask 26 dbm gain flatness within band(2.4~2.5ghz) +/-0.1 db input return loss -8 db output return loss -11 db 2f, 3f, 4f harmonics cw signal, pout = 21.5 dbm -40 dbc t on (ramp-on time) rise time for 10% to 90% pout <100 ns free datasheet http://
RTC6691 v0.3 data sheet jul 2006 4 www.richwave.com.tw specifications subject to change without notice pre liminary confidential proprietary s-parameter free datasheet http://
RTC6691 v0.3 data sheet jul 2006 5 www.richwave.com.tw specifications subject to change without notice pre liminary confidential proprietary evm and current consumption pout vs evm 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 pout (dbm) evm (%) 100 120 140 160 180 200 220 240 260 280 300 icc (ma) evm(%) icc(ma) p1db and psat power sweep 100 150 200 250 300 350 400 450 500 550 600 -21 -19 -17 -15 -13 -11 -9 -7 -5 -3 -1 1 3 pin(dbm) icc (ma) 10 15 20 25 30 35 pout (dbm) gain(db) icc(ma) pout(dbm) gain(db) free datasheet http://
RTC6691 v0.3 data sheet jul 2006 6 www.richwave.com.tw specifications subject to change without notice pre liminary confidential proprietary power detector pout vs vpd 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 2 4 6 8 10 12 14 16 18 20 22 24 pout (dbm) vpd (v) 802.11b spectral mask (11mbps cck) 802.11g spectr al mask (54mbps ofdm) pout = 26 dbm pout = 23.5 dbm free datasheet http://
RTC6691 v0.3 data sheet jul 2006 7 www.richwave.com.tw specifications subject to change without notice pre liminary confidential proprietary evaluation board schematic free datasheet http://
RTC6691 v0.3 data sheet jul 2006 8 www.richwave.com.tw specifications subject to change without notice pre liminary confidential proprietary evb layout : top layer midlayer1 midlayer2 bottom layer note : 1. vcc1, vcc2, vcc3 and vccb are connected toge ther and applied to 3.3v. vref1 and vref2 can be connected together and appli ed to the other 2.9v. 2. the evaluation board is 4-layer pcb using fr4 mat erial. the thickness between top layer and midlayer1 (gnd) is 8 mil. if the pcb thickness is changed, 50 transmission line dimension needs to be re-calcula ted. free datasheet http://
RTC6691 v0.3 data sheet jul 2006 9 www.richwave.com.tw specifications subject to change without notice pre liminary confidential proprietary package : quad flat no-lead plastic package ( qfn16 3x3 ) free datasheet http://
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